1H NMR studies of PECVD a-SiNx:H

被引：0
|
作者：
He, Yihua [1 ]
Weng, Limin [1 ]
Xu, Chunfang [1 ]
Yang, Guang [1 ]
Wu, Xuewen [1 ]
机构：
[1] East China Normal Univ, Shanghai, China
来源：
International Conference on Solid-State and Integrated Circuit Technology Proceedings | 1998年
关键词：
Annealing - Nuclear magnetic resonance - Plasma enhanced chemical vapor deposition - Silicon nitride - Substrates - Thermal effects;
D O I：
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中图分类号：
学科分类号：
摘要：
1H NMR measurements were performed in plasma-chemical - vapor-deposited amorphous hydrogenated silicon nitride (PECVD a-SiNx:H) films. The spectra were used to analysis the hydrogen content and distribution which were varied with the deposition condition such as substrate temperature(Ts) and radiofrequency(rf) power. The effects of annealing were also discussed.
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页码：304 / 306
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