On the dynamics of the oxidation-induced stacking-fault ring in as-grown Czochralski silicon crystals

被引：0
|
作者：
机构：
来源：
Appl Phys Lett | / 17卷 / 2250期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] On the dynamics of the oxidation-induced stacking-fault ring in as-grown Czochralski silicon crystals
    Sinno, T
    Brown, RA
    vonAmmon, W
    Dornberger, E
    APPLIED PHYSICS LETTERS, 1997, 70 (17) : 2250 - 2252
  • [2] Point defect dynamics and the oxidation-induced stacking-fault ring in Czochralski-grown silicon crystals
    Sinno, T
    Brown, RA
    von Ammon, W
    Dornberger, E
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1998, 145 (01) : 302 - 318
  • [3] Numerical analysis for the dynamics of the oxidation-induced stacking fault in Czochralski-grown silicon crystals
    Wang, JH
    Oh, HJ
    Yoo, HD
    KOREAN JOURNAL OF CHEMICAL ENGINEERING, 2001, 18 (01) : 81 - 87
  • [4] Numerical analysis for the dynamics of the oxidation-induced stacking fault in czochralski-grown silicon crystals
    Jong Hoe Wang
    Hyun Jung Oh
    Hak-Do Yoo
    Korean Journal of Chemical Engineering, 2001, 18 : 81 - 87
  • [5] Influence of boron concentration on the oxidation-induced stacking fault ring in Czochralski silicon crystals
    Dornberger, E
    Graf, D
    Suhren, M
    Lambert, U
    Wagner, P
    Dupret, F
    vonAmmon, W
    JOURNAL OF CRYSTAL GROWTH, 1997, 180 (3-4) : 343 - 352
  • [6] GENERATION OF OXIDATION-INDUCED STACKING-FAULTS IN CZOCHRALSKI-GROWN SILICON-CRYSTALS EXHIBITING A RING-LIKE DISTRIBUTED STACKING-FAULT REGION
    MARSDEN, K
    SADAMITSU, S
    YAMAMOTO, T
    SHIGEMATSU, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (6A): : 2974 - 2980
  • [7] Boron retarded self-interstitial diffusion in Czochralski growth of silicon crystals and its role in oxidation-induced stacking-fault ring dynamics
    Sinno, T
    Susanto, H
    Brown, RA
    von Ammon, W
    Dornberger, E
    APPLIED PHYSICS LETTERS, 1999, 75 (11) : 1544 - 1546
  • [8] Defects in the oxidation-induced stacking fault ring region in Czochralski silicon crystal
    Harada, K
    Tanaka, H
    Watanabe, T
    Furuya, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (6A): : 3194 - 3199
  • [9] Generation of oxidation-induced stacking faults in Czochralski-grown silicon crystals exhibiting a ring-like distributed stacking fault region
    Marsden, Kieran, 1600, JJAP, Minato-ku, Japan (34):
  • [10] ON THE DOPING DEPENDENCE OF OXIDATION-INDUCED STACKING-FAULT SHRINKAGE IN SILICON
    FAIR, RB
    CARIM, A
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (10) : 2319 - 2321
12345