STRAIN MODEL FOR EL2 IN GaAs.

被引：0
|
作者：
Zou Yuan-xi [1 ]
机构：
[1] Acad Sinica, Shanghai, China, Acad Sinica, Shanghai, China
来源：
Xi You Jin Shu/Rare Metals | 1986年 / 5卷 / 04期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
11
引用
收藏
页码：241 / 243
相关论文
共 50 条
  • [41] ON THE PHYSICAL ORIGINS OF THE EL2 CENTER IN GAAS
    WANG, WL
    LI, SS
    LEE, DH
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (01) : 196 - 199
  • [42] THE EL2 CENTER IN GAAS - SYMMETRY AND METASTABILITY
    BAGRAEV, NT
    JOURNAL DE PHYSIQUE I, 1991, 1 (10): : 1511 - 1527
  • [43] PROPERTIES OF EL2 IN GAAS AND GAAS1-XPX
    SAMUELSON, L
    PHYSICA B & C, 1984, 127 (1-3): : 104 - 111
  • [44] ATOMIC MODEL AND ITS EXPERIMENTAL IDENTIFICATION FOR EL2 IN SI-GAAS
    LI, GP
    HE, XK
    WANG, Q
    YAN, P
    LI, XB
    RU, QN
    SEMI-INSULATING III-V MATERIALS, MALMO 1988, 1988, : 349 - 353
  • [45] Model calculation of local vibration center related to EL2 levels in GaAs
    Zhong, Xuefu
    Jiang, Desheng
    Ge, Weikun
    Song, Chunying
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1988, 9 (05): : 517 - 523
  • [46] EL2 revisited: Observation of metastable and stable energy levels of EL2 in semi-insulating GaAs
    Kabiraj, D
    Ghosh, S
    APPLIED PHYSICS LETTERS, 2005, 87 (25) : 1 - 3
  • [47] MODEL STUDY OF THE LOCAL VIBRATION CENTER RELATED TO EL2 LEVELS IN GAAS
    ZHONG, XF
    JIANG, DS
    GE, WK
    SONG, CY
    APPLIED PHYSICS LETTERS, 1988, 52 (08) : 628 - 630
  • [48] PROPERTIES OF EL2 IN GaAs AND GaAs1 - xPx.
    Samuelson, L.
    Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics, 1984, 127 B-C (1-3): : 104 - 111
  • [49] A NEW EMISSION BAND RELATED TO EL2 IN GAAS
    MORI, Y
    YOSHIMURA, Y
    KAMODA, H
    OHKURA, H
    CHIBA, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (12): : L2122 - L2124
  • [50] Metastable transformation of EL2 in semi-insulating GaAs: The role of the actuator level and the photoionization of EL2
    Alvarez, A
    Jimenez, J
    Gonzalez, MA
    APPLIED PHYSICS LETTERS, 1996, 68 (21) : 2959 - 2961
12345