STRAIN MODEL FOR EL2 IN GaAs.

被引:0
|
作者
Zou Yuan-xi [1 ]
机构
[1] Acad Sinica, Shanghai, China, Acad Sinica, Shanghai, China
来源
Xi You Jin Shu/Rare Metals | 1986年 / 5卷 / 04期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
11
引用
收藏
页码:241 / 243
相关论文
共 50 条
  • [31] PIEZOSPECTROSCOPIC STUDY OF THE EL2 DEFECT IN GAAS
    TRAUTMAN, P
    WALCZAK, JP
    BARANOWSKI, JM
    ACTA PHYSICA POLONICA A, 1990, 77 (01) : 51 - 54
  • [32] ANTISITE-INTERSTITIAL-COMPLEX MODEL FOR THE EL2 DEFECT IN GAAS
    CHADI, DJ
    PHYSICAL REVIEW B, 1992, 46 (23): : 15053 - 15057
  • [33] THERMAL-STABILITY OF EL2 IN GAAS
    BODDAERT, X
    LETARTRE, X
    STIEVENARD, D
    BOURGOIN, JC
    ADVANCES IN MATERIALS, PROCESSING AND DEVICES IN III-V COMPOUND SEMICONDUCTORS, 1989, 144 : 3 - 8
  • [34] The energy level of the EL2 defect in GaAs
    Bourgoin, JC
    Neffati, T
    SOLID-STATE ELECTRONICS, 1999, 43 (01) : 153 - 158
  • [35] ULTRASOUND REGENERATION OF EL2 CENTERS IN GAAS
    BUYANOVA, IA
    OSTAPENKO, SS
    SHEINKMAN, MK
    MURRIKOV, M
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1994, 9 (02) : 158 - 162
  • [36] SITE SYMMETRY OF THE EL2 CENTER IN GAAS
    LEVINSON, M
    KAFALAS, JA
    PHYSICAL REVIEW B, 1987, 35 (17): : 9383 - 9386
  • [37] UNIFICATION OF THE PROPERTIES OF THE EL2 DEFECT IN GAAS
    HOINKIS, M
    WEBER, ER
    WALUKIEWICZ, W
    LAGOWSKI, J
    MATSUI, M
    GATOS, HC
    MEYER, BK
    SPAETH, JM
    PHYSICAL REVIEW B, 1989, 39 (08): : 5538 - 5541
  • [38] EL2 FAMILY IN LEC AND HB GAAS
    MOCHIZUKI, Y
    IKOMA, T
    REVUE DE PHYSIQUE APPLIQUEE, 1988, 23 (05): : 747 - 763
  • [39] GENERATION KINETICS OF EL2 CENTERS IN GAAS
    SUEZAWA, M
    SUMINO, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1988, 27 (01): : L18 - L20
  • [40] IDENTIFICATION OF A DEFECT IN A SEMICONDUCTOR - EL2 IN GAAS
    VONBARDELEBEN, HJ
    STIEVENARD, D
    DERESMES, D
    HUBER, A
    BOURGOIN, JC
    PHYSICAL REVIEW B, 1986, 34 (10): : 7192 - 7202