STRAIN MODEL FOR EL2 IN GaAs.

被引：0

作者：

Zou Yuan-xi ^{[1
]}

机构：

[1] Acad Sinica, Shanghai, China, Acad Sinica, Shanghai, China

来源：

Xi You Jin Shu/Rare Metals | 1986年 / 5卷 / 04期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：241 / 243

共 50 条

[21] METASTABILITY OF EL2 DEFECT IN GAAS
WALCZAK, JP
KAMINSKA, M
BARANOWSKI, JM
ACTA PHYSICA POLONICA A, 1987, 71 (03) : 337 - 339
[22] ON THE METASTABILITY OF EL2 DEFECT IN GAAS
KUSZKO, W
KAMINSKA, M
ACTA PHYSICA POLONICA A, 1986, 69 (03) : 427 - 430
[23] Electron capture on EL2 in GaAs
Neffati, T
Bourgoin, JC
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1997, 203 (02): : 459 - 463
[24] SYMMETRY OF THE EL2 DEFECT IN GAAS
FIGIELSKI, T
WOSINSKI, T
PHYSICAL REVIEW B, 1987, 36 (02): : 1269 - 1272
[25] Thermal stability of EL2 in GaAs
Boddaert, X., 1600, (B3):
[26] On the energy level of EL2 in GaAs
Look, DC
Fang, ZQ
SOLID-STATE ELECTRONICS, 1999, 43 (07) : 1317 - 1319
[27] EVIDENCE FOR ASSOCIATED DEEP DONOR-SHALLOW ACCEPTOR PAIR RECOMBINATION FOR THE EL2 EMISSION BAND IN GaAs.
Shanabrook, B.V.
Klein, P.B.
Bishop, S.G.
Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics, 1982, 117-118 (Pt I): : 173 - 175
[28] STRUCTURE AND METASTABILITY OF THE EL2 DEFECT IN GAAS
TRAUTMAN, P
BARANOWSKI, JM
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 1995, 9 (11): : 1263 - 1312
[29] METASTABLE STATE OF THE EL2 DEFECT IN GAAS
VONBARDELEBEN, HJ
PHYSICAL REVIEW B, 1989, 40 (18): : 12546 - 12549
[30] THERMAL-STABILITY OF EL2 IN GAAS
BODDAERT, X
LETARTRE, X
STIEVENARD, D
BOURGOIN, JC
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1989, 3 (03): : 249 - 251