Fabrication of GaN nanostructures by a sidewall-etchback process

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[1] Pearton, S.J.
[2] Ren, F.
[3] Abernathy, C.R.
[4] Lothian, J.R.
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Pearton, S.J. | 1600年 / Publ by Institute of Physics Publishing Ltd, Bristol, United Kingdom卷 / 09期
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Semiconductor device structures;
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