REACTIVE ION ETCHING.

被引：0

作者：

Gorowitz, Bernard ^{[1
]}

Saia, Richard J. ^{[1
]}

机构：

[1] GE, Schenectady, NY, USA, GE, Schenectady, NY, USA

来源：

VLSI Electronics, Microstructure Science | 1984年 / 8卷

关键词：

ETCHING - ION BEAMS - Applications;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

We review some of the general principles specific to reactive ion etching, the effects of process parameters, equipment considerations, and applications with respect to various materials and structures. It is assumed that this discussion will be taken in the context of other portions of this volume that address, in greater detail, plasma-etch mechanisms, other plasma-etch tecniques, plasma diagnostics, and other processes that assist in high-resolution patterning.

引用

页码：297 / 339