STUDY OF THE BEHAVIOUR OF ″HYDROGEN-DEFECTS COMPLEX″ DONOR IN SILICON.

被引：0
|
作者：
Wang Zhengyuan
Lin Lanying
机构：
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 1982年 / 3卷 / 06期
关键词：
Compendex;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
SEMICONDUCTING SILICON
引用
收藏
页码：440 / 449
相关论文
共 50 条
  • [21] SYSTEMATIC ANALYSIS OF DEFECTS IN ION-IMPLANTED SILICON.
    Jones, K.S.
    Prussin, S.
    Weber, E.R.
    Applied physics. A, Solids and surfaces, 1988, A45 (01): : 1 - 34
  • [22] CALCULATION OF LOCAL DENSITY OF STATES AT DEFECTS IN DIAMOND AND SILICON.
    Jones, R.
    King, T.
    Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics, 1982, 116 B&C (1-3): : 72 - 75
  • [23] ROLE OF INTERSTITIAL ATOMS IN FORMATION OF RADIATION DEFECTS IN SILICON.
    Litvinko, A.G.
    Murin, L.I.
    Tkachev, V.D.
    Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1976, 10 (06): : 644 - 647
  • [24] THERMAL STABILITY OF STRAIN-INDUCED DEFECTS IN SILICON.
    Yonenaga, I.
    Sumino, K.
    Bulletin of the Academy of Sciences of the U.S.S.R. Physical series, 1986, 51 (09): : 23 - 26
  • [25] CHANGES IN THE RELATIVE RATES OF GENERATION OF RADIATION DEFECTS IN SILICON.
    Gerasimenko, N.N.
    Zaitsev, B.A.
    Panov, V.I.
    Smirnov, L.S.
    Tishkovskii, E.G.
    Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1974, 7 (07): : 960 - 961
  • [26] INVESTIGATION OF RADIATION DEFECTS IN NEUTRON-IRRADIATED SILICON.
    Aleksandrov, L.N.
    Zotov, M.I.
    Stas', V.F.
    Surin, B.P.
    Soviet physics. Semiconductors, 1984, 18 (01): : 42 - 44
  • [27] STUDY ON Fe + IMPLANTED IN SILICON.
    Honglin, Zhao
    Bingqiao, Li
    Ji, Pan
    Tianjin Daxue Xuebao (Ziran Kexue yu Gongcheng Jishu Ban)/Journal of Tianjin University Science and Technology, 1988, (01): : 17 - 22
  • [28] PHOTOLUMINESCENCE STUDY OF MICROCRYSTALLINE SILICON.
    Liu, Xiangna
    Feng, Xiaomei
    Tang, Wenguo
    Li, Zhiyuan
    Chinese Journal of Infrared Research, Series B (English Edition), 1987, 6 : 7 - 14
  • [29] DLTS analysis of nickel-hydrogen complex defects in silicon
    Shiraishi, M
    Sachse, JU
    Lemke, H
    Weber, J
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 58 (1-2): : 130 - 133
  • [30] MODELLING OF DOPANT PROFILES MODIFIED BY DIFFUSING DEFECTS IN POLYCRYSTALLINE SILICON.
    Krimmel, E.F.
    Langfeld, R.
    Lutsch, A.G.K.
    1985, (88):
12345