STUDY OF THE BEHAVIOUR OF ″HYDROGEN-DEFECTS COMPLEX″ DONOR IN SILICON.

被引：0
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作者：
Wang Zhengyuan
Lin Lanying
机构：
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 1982年 / 3卷 / 06期
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Compendex;
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摘要：
SEMICONDUCTING SILICON
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页码：440 / 449
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