Dynamics of phasons; Phase defects formed on dimer rows, and related structural changes of the Si(100) surface at 80 K studied by scanning tunneling microscopy

被引：0

作者：

Shigekawa, Hidemi ^{[1
]}

Miyake, Koji ^{[1
]}

Ishida, Masahiko ^{[1
]}

Hata, Kenji ^{[1
]}

机构：

[1] Univ of Tsukuba, Tsukuba, Japan

来源：

Japanese Journal of Applied Physics, Part 2: Letters | 1997年 / 36卷 / 3 A期

关键词：

Experimental; (EXP);

D O I：

10.1143/jjap.36.l294

中图分类号：

学科分类号：

摘要：

Type-P defects, which are mobile phase defects on dimer rows with a structure similar to that of the type-C defect, were observed on Si(100) surface at 80 K, however, the observed surface structure was mainly c(4×2), contrary to the previous results obtained at 6 K. Complete p(2×2) arrangement was unstable, and type-P defects tended to form pairs with other type-P defects on neighboring dimer rows, resulting in a reduction of the area with complete p(2×2) arrangement. This is the first observation of the interacting phasons; type-P defects formed on Si(100) surface. The observed results were analyzed with the Ising model, and domain boundaries between c(4×2) and p(2×2) arrangements were found to play an important role in the dynamics of type-P defects at 80 K.

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