REVEALING OF DEFECTS IN GaAs.

被引:0
|
作者
Min, Hui-Fang [1 ]
Shen, Bao-Liang [1 ]
Zhao, Zhe [1 ]
机构
[1] Acad Sinica, China, Acad Sinica, China
来源
Xiyou jinshu | 1988年 / 7卷 / 01期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:37 / 41
相关论文
共 50 条
  • [41] STRAIN MODEL FOR EL2 IN GaAs.
    Zou Yuan-xi
    Xi You Jin Shu/Rare Metals, 1986, 5 (04): : 241 - 243
  • [42] VIOLATION OF STOICHIOMETRY DURING ION IMPLANTATION IN GaAs.
    Piskunov, D.I.
    Soviet Physics - Lebedev Institute Reports (English Translation of Sbornik Kratkie Soobshcheniya p, 1985, (08): : 65 - 68
  • [43] EFFECTS OF PLASTIC STRAIN ON THE ELECTRICAL PARAMETERS OF GaAs.
    Hertsen, D.
    Haasen, P.
    Bulletin of the Academy of Sciences of the U.S.S.R. Physical series, 1986, 51 (04): : 56 - 60
  • [44] Simulation of electrical properties in ion implanted GaAs.
    Ali-Boucetta, H.
    Bensalem, R.
    Alleg, S.
    Smith, A.
    Gwilliam, R.
    Sealy, B.
    PROCEEDINGS OF THE JMSM 2008 CONFERENCE, 2009, 2 (03): : 797 - 801
  • [45] MECHANICAL DAMAGE INDUCED LUMINESCENCE BAND IN GaAs.
    Swaminathan, V.
    Young, M.S.
    Caruso, R.
    1600, (57):
  • [46] INVESTIGATION OF ADDITIONAL MINIMA IN n-TYPE GaAs.
    Dragunov, V.P.
    Kravchenko, A.F.
    Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1974, 8 (02): : 266 - 267
  • [47] BARRIER HEIGHT CONTROL OF UNIPOLAR DIODES IN MBE GaAs.
    Woodcock, J.M.
    Harris, J.J.
    Annual Review - Philips Research Laboratories, 1982, : 37 - 39
  • [48] PULSED SPACE-CHARGE-LIMITED CURRENTS IN GaAs.
    Gildenblat, G.Sh.
    Rao, A.R.
    Electron device letters, 1987, EDL-8 (04): : 135 - 136
  • [49] INTERFACIAL REACTION AND SCHOTTKY BARRIER BETWEEN Pt AND GaAs.
    Fontaine, C.
    Okumura, T.
    Tu, K.N.
    1600, (54):
  • [50] EFFECTS OF PROTON BOMBARDMENT TO n-TYPE GaAs.
    Sakurai, Teruo
    Bamba, Yasuo
    Furuya, Tsuneo
    Fujitsu Scientific and Technical Journal, 1975, 11 (02): : 71 - 80