REVEALING OF DEFECTS IN GaAs.

被引：0

作者：

Min, Hui-Fang ^{[1
]}

Shen, Bao-Liang ^{[1
]}

Zhao, Zhe ^{[1
]}

机构：

[1] Acad Sinica, China, Acad Sinica, China

来源：

Xiyou jinshu | 1988年 / 7卷 / 01期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：37 / 41

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[21] DEFECT STRAIN FIELDS IN EPITAXIAL GaAs.
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[22] OXYGEN ION BEAM MODIFICATION OF GaAs.
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[23] LIQUID PHASE EPITAXIAL GROWTH OF GaAs.
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[24] POINT DEFECT MOBILITY IN IRRADIATED GaAs.
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[25] MECHANISM FOR ACTIVATING TIN IMPLANTS IN GaAs.
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[28] EXCITON-PLASMA TRANSITION IN GaAs.
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1600, (46):
[29] PROPERTIES OF THE 78 meV ACCEPTOR IN GaAs.
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[30] THRESHOLD ENERGY FOR IMPACT IONIZATION IN GaAs.
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