Subcubic power dependence of third-harmonic generation for in-plane far-infrared excitation of InAs quantum wells

被引：0
|
作者：
Markelz, A.G. [1 ]
Asmar, N.G. [1 ]
Gwinn, E.G. [1 ]
Sherwin, M.S. [1 ]
Nguyen, C. [1 ]
Kroemer, H. [1 ]
机构：
[1] Univ of California, Santa Barabara, United States
来源：
Semiconductor Science and Technology | 1994年 / 9卷 / 5 SUPPL期
关键词：
Fundamental intensity - Semiconducting indium arsenide - Subcubic power dependence - Third harmonic generation;
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页码：634 / 713
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