Novel structure for a-SIN:H/a-Si:H multilayer avalanche photodiodes

被引:0
作者
Jiao, Lihong [1 ]
Meng, Zhiguo [1 ]
Sun, Zhonglin [1 ]
机构
[1] Motorola (China) Electronic LTD, Tianjin, China
来源
Tien Tzu Hsueh Pao/Acta Electronica Sinica | 1994年 / 22卷 / 02期
关键词
Amorphous materials - Semiconductor diodes;
D O I
暂无
中图分类号
TN3 [半导体技术]; TN4 [微电子学、集成电路(IC)];
学科分类号
0805 ; 080501 ; 080502 ; 080903 ; 1401 ;
摘要
In this paper, the authors proposed a novel structure for a-SIN:H/a-Si:H multilayer photodiode - reach-through-valley APD, analyzed two important parameters--multiplication factor M and excess noise factor Fe which mark the APD's characteristics, gave the quantized formulas for M and Fe theoretically, and discussed in detail the micromechanism of the carrier transporting in this structure. The reach-through-valley APD was fabricated successfully in laboratory. By measuring and analyzing, a new model - tunnelling was proposed to calculate M and Fe experimentally which are 5.8 and 1.48 respectively when VR=-13V.
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页码:15 / 21
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