Novel structure for a-SIN:H/a-Si:H multilayer avalanche photodiodes

被引：0

作者：

Jiao, Lihong ^{[1
]}

Meng, Zhiguo ^{[1
]}

Sun, Zhonglin ^{[1
]}

机构：

[1] Motorola (China) Electronic LTD, Tianjin, China

来源：

Tien Tzu Hsueh Pao/Acta Electronica Sinica | 1994年 / 22卷 / 02期

关键词：

Amorphous materials - Semiconductor diodes;

D O I：

暂无

中图分类号：

TN3 [半导体技术]; TN4 [微电子学、集成电路（IC）];

学科分类号：

0805 ; 080501 ; 080502 ; 080903 ; 1401 ;

摘要：

In this paper, the authors proposed a novel structure for a-SIN:H/a-Si:H multilayer photodiode - reach-through-valley APD, analyzed two important parameters--multiplication factor M and excess noise factor Fe which mark the APD's characteristics, gave the quantized formulas for M and Fe theoretically, and discussed in detail the micromechanism of the carrier transporting in this structure. The reach-through-valley APD was fabricated successfully in laboratory. By measuring and analyzing, a new model - tunnelling was proposed to calculate M and Fe experimentally which are 5.8 and 1.48 respectively when VR=-13V.

引用

页码：15 / 21