On the role of interdiffusion during the growth of Ge on Si(001) and Si(111)

被引：0

作者：

Koch, R. ^{[1
]}

Wassermann, B. ^{[1
]}

Wedler, G. ^{[1
]}

机构：

[1] Paul-Drude-Inst. F., Hausvogteiplatz 5-7, D-10117 Berlin, Germany

来源：

Diffusion and Defect Data. Pt A Defect and Diffusion Forum | 2000年 / 183卷

关键词：

Elasticity - Epitaxial growth - Film growth - Interdiffusion (solids) - Point defects - Semiconducting silicon - Semiconductor quantum dots - Strain - Stress analysis;

D O I：

10.4028/www.scientific.net/ddf.183-185.95

中图分类号：

学科分类号：

摘要：

The 3D islands of the Stranski-Krastanow-systems Ge/Si(001) and Ge/Si(111), that form either during Ge deposition above 950 K or upon annealing of previously flat and nearly strain-relieved Ge films, are found to be composed of a mixture of Ge and Si, thus pointing to considerable interdiffusion at temperatures above 950 K. Direct measurements of the elastic energy by a cantilever beam device reveal that the Si in-diffusion is mainly driven by the gain in configurational entropy and not by the reduction of misfit-strain.

引用

页码：95 / 102