DESIGN AND CHARACTERISTICS FOR A 4 mu m PERIOD ION-IMPLANTED BUBBLE DEVICE.

被引：0

作者：

Satoh, Yoshio ^{[1
]}

Miyashita, Tsutomu ^{[1
]}

Ohashi, Makoto ^{[1
]}

机构：

[1] Fujitsu Lab Ltd, Components, Technology Lab, Atsugi, Jpn, Fujitsu Lab Ltd, Components Technology Lab, Atsugi, Jpn

来源：

| 1600年 / 20期

关键词：

D O I：

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学科分类号：

摘要：

MAGNETIC DEVICES

引用

共 50 条

[41] EVALUATION OF (YBICA)3(FESI)5O12 EPITAXIAL-FILMS FOR EXTENDED TEMPERATURE-RANGE ION-IMPLANTED 4-MU-M-PERIOD BUBBLE-DEVICES
SLUSKY, SEG
BALLINTINE, JE
LIEBERMAN, RA
LUTHER, LC
NELSON, TJ
IEEE TRANSACTIONS ON MAGNETICS, 1982, 18 (06) : 1286 - 1288
[42] MAGNETIC-STRUCTURE OF ION-IMPLANTED BUBBLE GARNETS
PICONE, PJ
MORRISH, AH
SOLID STATE COMMUNICATIONS, 1980, 34 (09) : 743 - 747
[43] STUDY OF ION-IMPLANTED BUBBLE GARNET-FILMS
DUROSOVA, IA
ZIUZIN, AM
KUDELKIN, NN
LIUFACHUN, MA
OSIKO, VV
RANDOSHKIN, VV
TELESNIN, RV
TIMOSHECHKIN, MI
DOKLADY AKADEMII NAUK SSSR, 1984, 277 (02): : 363 - 366
[44] LARGE CAPACITY ION-IMPLANTED BUBBLE-DEVICES
BONYHARD, PI
HAGEDORN, FB
EKHOLM, DT
MUEHLNER, DJ
NELSON, TJ
ROMAN, BJ
IEEE TRANSACTIONS ON MAGNETICS, 1982, 18 (02) : 737 - 740
[45] NDRO DETECTOR FOR ION-IMPLANTED BUBBLE-DEVICES
EKHOLM, DT
BONYHARD, PI
MUEHLNER, DJ
NELSON, TJ
JOURNAL OF APPLIED PHYSICS, 1982, 53 (03) : 2525 - 2527
[46] ION-IMPLANTED MAGNETIC BUBBLE MEMORY DEVICES.
Toyooka, T.
IEEE translation journal on magnetics in Japan, 1988, 3 (01): : 13 - 21
[47] ANNEAL CHARACTERISTICS OF ION-IMPLANTED ZNO
THOMAS, BW
WALSH, D
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1973, 6 (05) : 612 - 615
[48] DYNAMICS OF 1-MU-M BUBBLES IN ION-IMPLANTED CONTIGUOUS DISK STRUCTURES
SANDERS, IL
KRYDER, MH
JOURNAL OF APPLIED PHYSICS, 1979, 50 (03) : 2252 - 2257
[49] OXIDATION CHARACTERISTICS OF ION-IMPLANTED TITANIUM
LEGG, KO
CATHCART, JM
STEVENSON, JR
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1981, 26 (03): : 420 - 420
[50] CHARACTERISTICS OF BCL ION-IMPLANTED SILICON
DELFINO, M
LUNNON, ME
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (11) : C470 - C470

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