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- [1] INFLUENCE OF UNIAXIAL DEFORMATION ON THE RECOMBINATION OF NONEQUILIBRIUM CARRIERS IN SILICON IRRADIATED WITH gamma RAYS.Soviet physics. Semiconductors, 1981, 15 (01): : 58 - 60Tarasik, M.I.Tkachev, V.D.Yanchenko, A.M.
- [2] INFLUENCE OF RADIATION DEFECTS ON IMPURITY DIFFUSION IN SILICON.1977, 11 (10): : 1096 - 1097Karmanov, V.T.Khokhlov, A.F.Pavlov, P.V.Zorin, E.I.
- [3] DETERMINATION OF THE NONEQUILIBRIUM CARRIER LIFETIME IN STRONGLY EXCITED CdSxSe1 - x.Soviet physics. Semiconductors, 1979, 13 (07): : 789 - 791Kozlovskii, V.I.Nasibov, A.S.Reznikov, P.V.
- [4] Minority carrier lifetime in Czochralski silicon containing oxide precipitatesECS Transactions, 1938, 11 (121-132):Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, United Kingdom不详不详不详
- [5] INFLUENCE OF GROWTH DEFECTS ON THE ELECTRICAL PROPERTIES OF RADIATION-DOPED SILICON.1978, 12 (10): : 1118 - 1120Gres'kov, I.M.Smirnov, B.V.Solov'ev, S.P.Stuk, A.A.Kharchenko, V.A.
- [6] Influence of different road conditions on the lifetime of a car carrierATZ worldwide, 2010, 112 (04) : 24 - 29Wagner, GernotHolzer, SiegfriedStockinger, ChristianFischcher, PeterWalser, Anton
- [7] INFLUENCE OF THE CHARGE STATE OF PRIMARY DEFECTS ON THE FORMATION OF COMPLEXES IN n-TYPE SILICON.Soviet physics. Semiconductors, 1980, 14 (02): : 189 - 191Gubskaya, V.I.Kuchinskii, P.V.Lomako, V.M.
- [8] INFLUENCE OF THE IRRADIATION TEMPERATURE AND OF THE NATURE OF DOPANT ON THE FORMATION OF DEFECTS IN N-TYPE ELECTRON-IRRADIATED SILICON.Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1974, 8 (03): : 303 - 305Vavilov, V.S.Glaxman, V.B.Isaev, N.U.Mukashev, B.N.Spitsyn, A.V.
- [9] INFLUENCE OF UNIAXIAL COMPRESSION ON THE IMPURITY-BAND CONDUCTION IN p-TYPE InSb.1973, 7 (02): : 287 - 288Galavanov, V.V.Obukhov, S.A.
- [10] INFLUENCE OF UNIAXIAL PRESSURE ON PROPERTIES OF p + -n-n + AND p + -n-p + SILICON STRUCTURES.1600, (09):Sultanov, N.A.Usmanov, K.U.