Structural properties and electrical behaviour of thin silicon oxynitride layers

被引：0
|
作者：
Beyer, R. [1 ]
Burghardt, H. [1 ]
Reich, R. [1 ]
Thomas, E. [1 ]
Gessner, T. [1 ]
Zahn, D.R.T. [1 ]
机构：
[1] Technische Universitaet Chemnitz, Chemnitz, Germany
来源：
Microelectronics Reliability | 1998年 / 38卷 / 02期
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页码：243 / 247
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