6H-SiC Schottky barrier diodes with nearly ideal breakdown voltage

被引：0
|
作者：
Brezeanu, G. [1 ]
Badila, M. [4 ]
Millan, J. [2 ]
Godignon, P. [2 ]
Locatelli, M.L. [3 ]
Chante, J.P. [3 ]
Lebedev, A.A. [4 ]
Banu, V. [4 ]
机构：
[1] Polytechnic University of Bucharest, RO-77206 Bucharest, Romania
[2] CNM Ctro. Nac. de Microelectronica, ES-08193 Bellaterra, Spain
[3] CEGELY, INSA de Lyon, 20 avenue A. Einstein, FR-69621 Villeurbanne Cedex, France
[4] Ioffe Physico-Technical Institute, RAS, Polytekhnicheskaya st. 26, RU-194021 St.-Petersburg, Russia
来源：
Materials Science Forum | 2000年 / 338 (II卷
关键词：
Annealing - Electric breakdown of solids - Electric rectifiers - Schottky barrier diodes - Semiconducting silicon compounds;
D O I：
10.4028/www.scientific.net/msf.338-342.1219
中图分类号：
学科分类号：
摘要：
A simple edge termination based on oxide ramp profile around the Schottky contact is used on Ni Schottky rectifier fabricated on a 2.7×1016 cm-3 n-type 6H-SiC epilayer. Three anneals of the Schottky contacts were experimented. The diodes annealed at 900 °C showed excellent reverse characteristics with a nearly ideal breakdown at about 800 V. Forward characteristics follow thermionic emission theory with ideality factor nearly one.
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页码：1219 / 1222
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