Pressure dependent two-dimensional electron transport in defect doped InGaAs/InP heterostructures

被引：0

作者：

Wasik, D. ^{[1
]}

Dmowski, L. ^{[1
]}

Mikucki, J. ^{[1
]}

Lusakowski, J. ^{[1
]}

Hsu, L. ^{[1
]}

Walukiewicz, W. ^{[1
]}

Bi, W.G. ^{[1
]}

Tu, C.W. ^{[1
]}

机构：

[1] Warsaw Univ, Warsaw, Poland

来源：

Materials Science Forum | 1997年 / 258-263卷 / pt 2期

关键词：

Charge transfer - Crystal impurities - Electric resistance - Electron sources - Hydrostatic pressure - Interfaces (materials) - Pressure effects - Semiconducting indium phosphide - Semiconductor device structures - Semiconductor doping - Semiconductor growth - Transport properties;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

We have measured the transport properties of InGaAs/InP heterostructures where donor-like native defects incorporated in a low temperature grown InP barrier are used as a source of electrons. Conductance of such structures shows comparable contributions from low mobility electrons in the InP barrier and from the two-dimensional electron gas (2DEG) at the heterostructure interface. We used high hydrostatic pressure to eliminate the low mobility conductance and were able to determine the parameters of two-dimensional electron gas. We find that the highest two-dimensional electron mobility of 3×104 cm2/Vs is determined by the scattering from the background ionized impurities located in the InGaAs quantum well.

引用

页码：813 / 818

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