PHOTOELECTRIC PROPERTIES OF nSiC-pSi HETEROJUNCTIONS.

被引：0
|
作者：
Evdokimov, V.M.
Strebkov, D.S.
Tikhomirova, V.A.
Fedosova, G.B.
机构：
来源：
Applied Solar Energy (English translation of Geliotekhnika) | 1982年 / 18卷 / 05期
关键词：
701 Electricity and Magnetism - 714 Electronic Components and Tubes - 804 Chemical Products Generally;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
8
引用
收藏
页码：11 / 16
相关论文
共 50 条
  • [21] Transport and photoelectric properties of vertical black phosphorus heterojunctions
    Sun, Cuicui
    Wang, Yuxiu
    Yang, Zhao-Di
    Shang, Yan
    Zhang, Guiling
    Hu, Yangyang
    NEW JOURNAL OF CHEMISTRY, 2020, 44 (25) : 10507 - 10518
  • [22] CONSIDERATION OF DISCRETE INTERFACE TRAPS IN InGaAs/GaAs HETEROJUNCTIONS.
    Jeong, Jichai
    Schlesinger, Tuviah
    Milnes, Arthur G.
    IEEE Transactions on Electron Devices, 1987, ED-34 (09) : 1911 - 1918
  • [23] Photoelectric properties of cadmium-zinc telluride heterojunctions
    Gorley, PM
    Demych, MV
    Horley, PP
    Makhniy, VP
    Ciach, R
    Beltowska-Lehman, E
    Swiatek, Z
    THIN SOLID FILMS, 2002, 403 : 267 - 270
  • [24] INVESTIGATION OF PHOTOELECTRIC PROPERTIES OF INAS-GASB HETEROJUNCTIONS
    BERGMANN, YV
    IZVOZCHIKOV, BV
    KOROLKOV, VI
    MURSAKULOV, NN
    PRAMATAROVA, LD
    TRETYAKOV, DN
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (08): : 930 - 931
  • [25] Photoelectric Properties of Microrelief Organic/Inorganic Semiconductor Heterojunctions
    Dmitruk, N. L.
    Borkovskaya, O. Yu.
    Naumenko, D. O.
    Mamontova, I. B.
    Kotova, N. V.
    Lytvyn, O. S.
    Vertsimakha, Ya. I.
    INTERFACE CONTROLLED ORGANIC THIN FILMS, 2009, 129 : 225 - 227
  • [26] CHARACTERISTICS OF ISOTYPE n Ge-n GaAs HETEROJUNCTIONS.
    De Jaeger, J.C.
    Salmer, G.
    IEE Proceedings I: Solid State and Electron Devices, 1980, 127 (04): : 207 - 211
  • [27] Photoelectric properties of isotype and anisotype Si/GaN:O heterojunctions
    S. E. Aleksandrov
    T. A. Gavrikova
    V. A. Zykov
    Semiconductors, 2000, 34 : 1295 - 1300
  • [28] Photoelectric properties of heterojunctions between silicon and polyhomoconjugated organometallic compounds
    N. V. Blinova
    E. L. Krasnopeeva
    Yu. A. Nikolaev
    A. Yu. Osadchev
    V. Yu. Rud’
    Yu. V. Rud’
    E. I. Terukov
    V. V. Shamanin
    Semiconductors, 2003, 37 : 53 - 56
  • [29] Photoelectric properties of heterojunctions between silicon and polyhomoconjugated organometallic compounds
    Blinova, NV
    Krasnopeeva, EL
    Nikolaev, YA
    Osadchev, AY
    Rud, VY
    Rud, YV
    Terukov, EI
    Shamanin, VV
    SEMICONDUCTORS, 2003, 37 (01) : 53 - 56
  • [30] Photoelectric properties of the n-SnSSe-p-InSe heterojunctions
    V. N. Katerinchuk
    Z. D. Kovalyuk
    V. V. Netyaga
    T. V. Betsa
    Technical Physics Letters, 2000, 26 : 754 - 756
12345