Dislocation structure formation in SiGe/Si multilayer heterostructures with low-temperature buffer layers

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作者：
Vdovin, V.I.
Rzaev, M.M.
Yugova, T.G.
Muhlberger, M.
Schaffler, F.
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Izvestiya Akademii Nauk. Ser. Fizicheskaya | 2003年 / 67卷 / 02期
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页码：170 / 173
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