Structural analysis of thermally oxidized amorphous Si1-xGex layers

被引：0
|
作者：
Benrakkad, M.S. [1 ]
Ferrer, J.C. [1 ]
Garrido, B. [1 ]
Pedroviejo, J.J. [1 ]
Calderer, J. [1 ]
Morante, J.R. [1 ]
机构：
[1] Universitat de Barcelona, Barcelona, Spain
来源：
| 1600年 / Elsevier Science B.V., Amsterdam, Netherlands卷 / 28期
关键词：
531.2; Metallography; -; 549.3; Others; including Bismuth; Boron; Cadmium; Cobalt; Mercury; Niobium; Selenium; Silicon; Tellurium and Zirconium - 741.1 Light/Optics - 741.3 Optical Devices and Systems - 801 Chemistry - 802.2 Chemical Reactions;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
2
引用
收藏
页码：1 / 4
相关论文
共 50 条
  • [41] Modeling germanium diffusion in Si1-xGex/Si superlattice structures
    Hasanuzzaman, Mohammad
    Haddara, Yaser M.
    Knights, Andrew P.
    JOURNAL OF APPLIED PHYSICS, 2009, 105 (04)
  • [42] High performance Si/Si1-xGex resonant tunneling diodes
    See, P
    Paul, DJ
    Holländer, B
    Mantl, S
    Zozoulenko, IV
    Berggren, KF
    IEEE ELECTRON DEVICE LETTERS, 2001, 22 (04) : 182 - 184
  • [43] Effect of Oxide Layer on Al-induced Crystallization of Amorphous Si1-xGex Thin Films
    Zhang, Tianwei
    Ma, Fei
    Xu, Kewei
    INEC: 2010 3RD INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1 AND 2, 2010, : 493 - 494
  • [44] Evolution of the liquid/solid interface roughness in Si1-xGex layers processed by nanosecond laser annealing
    Demoulin, R.
    Daubriac, R.
    Kerdiles, S.
    Dagault, L.
    Adami, O.
    Ricciarelli, D.
    Hartmann, J. -m.
    Chiodi, F.
    Mio, A. M.
    Opprecht, M.
    Scheid, E.
    Alba, P. Acosta
    Debarre, D.
    La Magna, A.
    Cristiano, F.
    APPLIED SURFACE SCIENCE, 2025, 684
  • [45] Si/Si1−xGex epitaxial layers and superlattices. Growth and structural characteristics
    F. F. Sizov
    V. P. Klad’ko
    S. V. Plyatsko
    A. P. Shevlyakov
    Yu. N. Kozyrev
    V. M. Ogenko
    Semiconductors, 1997, 31 : 786 - 788
  • [46] Gold-related levels in relaxed Si1-xGex alloy layers:: A study of the pinning effect
    Mesli, A
    Kringhoj, P
    Larsen, AN
    DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3, 1997, 258-2 : 145 - 150
  • [47] Segregation and diffusion of impurities from doped Si1-xGex films into silicon
    Kobayashi, S
    Aoki, T
    Mikoshiba, N
    Sakuraba, M
    Matsuura, T
    Murota, J
    THIN SOLID FILMS, 2000, 369 (1-2) : 222 - 225
  • [48] pMOSFET Performance Enhancement With Strained Si1-xGex Channels
    Ho, Byron
    Xu, Nuo
    Liu, Tsu-Jae King
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2012, 59 (05) : 1468 - 1474
  • [49] Composition dependence of Si and Ge diffusion in relaxed Si1-xGex alloys
    Kube, R.
    Bracht, H.
    Hansen, J. Lundsgaard
    Larsen, A. Nylandsted
    Haller, E. E.
    Paul, S.
    Lerch, W.
    JOURNAL OF APPLIED PHYSICS, 2010, 107 (07)
  • [50] Electrochemical performances of nanorod structured Si1-xGex anodes
    Wang, Desheng
    Yang, Zhibo
    He, Deyan
    MATERIALS LETTERS, 2014, 128 : 163 - 166
12345