Investigation of nonswitching regions in ferroelectric thin films using scanning force microscopy

被引：0

作者：

Saya, Yuko ^{[1
,2
]}

Watanabe, Shunji ^{[1
]}

Kawai, Maki ^{[1
,2
]}

Yamada, Hirofumi ^{[3
]}

Matsushige, Kazumi ^{[3
]}

机构：

[1] RIKEN (Inst. Phys. and Chem. Res.), 2-1 Hirosawa, Wako, Saitama 351-0198, Japan

[2] Department of Physics, Faculty of Science, Science University of Tokyo, 1-3 Kagurazaka, Shinjuku-ku, Tokyo 162-8601, Japan

[3] Dept. of Electron. Sci. and Eng., Kyoto University, Kyoto 606-8501, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2000年 / 39卷 / 6 B期

关键词：

Crystal lattices - Crystal orientation - Deposition - Electrodes - Epitaxial growth - Ferroelectric materials - Lead compounds - Microscopic examination - Pulsed laser applications - Strontium compounds - Thin films - Yttrium barium copper oxides;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Nonswitching regions which degrade the electrical properties of ferroelectric thin films were investigated by scanning probe microscopy. An 80-nm-thick PbZr0.5Ti0.5O3(001)(PZT) ferroelectric thin film and a YBa2Cu3O7-δ (100) bottom electrode were grown on SrTiO3(100) substrates by the pulsed laser deposition method. We successfully detected nonswitching regions in the PZT thin films by measuring ferroelectric hysteresis loops using a scanning probe microscope, and the hysteresis loops showed an asymmetric shift toward negative remanent polarization. It is suggested that the nonswitching regions originate from dislocations caused by a lattice mismatch between the PbZr0.5Ti0.5O3(001) and the YBa2Cu3O7-δ(100). The effective thickness of the nonswitching regions is estimated to be 20 nm from the amount of the shift of the hysteresis loops.

引用

页码：3799 / 3803