Femtosecond time-resolved photoelectron spectroscopy of annealed and sputtered GaP(110)

被引：0

作者：

Leblans, M. ^{[1
]}

Thoma, R.K.R. ^{[1
]}

LoPresti, J.L. ^{[1
]}

Reichling, M. ^{[1
]}

Williams, R.T. ^{[1
]}

机构：

[1] Wake Forest Univ, Winston-Salem, United States

来源：

Journal of Luminescence | 1997年 / 72-74卷

关键词：

Band gap - Gallium phosphide - Photoelectron emission - Photon excitation - Ultrafast spectroscopy;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The relaxation of photoexcited electrons and holes at surfaces of GaP(110) was studied by means of two- and three-photon photoelectron emission under 3.16 eV photon excitation. With 200 fs time resolution, only the relaxation of surface states within the bulk band gap could be resolved occurring with time constants of 0.3 and 2.5 ps.

引用

页码：108 / 109