共 50 条
- [1] EFFECTS OF MAGNETIC-FIELD GRADIENT ON CRYSTALLOGRAPHIC PROPERTIES IN TIN-DOPED INDIUM OXIDE-FILMS DEPOSITED BY ELECTRON-CYCLOTRON-RESONANCE PLASMA SPUTTERING JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1994, 33 (9A): : 4997 - 5004
- [2] Optical and electrical properties of tin-doped indium oxide transparent conducting films deposited by magnetron sputtering Zhong, Z.-Y. (zyzhongzy@163.com), 1600, Chinese Ceramic Society, Baiwanzhuang, Beijing, 100831, China (42):
- [3] Study on crystallinity of tin-doped indium oxide films deposited by DC magnetron sputtering JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (4A): : 1870 - 1876
- [4] Electrical and structural properties of tin-doped indium oxide films deposited by DC sputtering at room temperature JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (5A): : 2921 - 2927
- [5] Preparation and crystallization of tin-doped and undoped amorphous indium oxide films deposited by sputtering Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1999, 38 (9 A): : 5224 - 5226
- [6] Preparation and crystallization of tin-doped and undoped amorphous indium oxide films deposited by sputtering JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (9A): : 5224 - 5226
- [7] Electrical and structural properties of tin-doped indium oxide films deposited by DC sputtering at room temperature Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1999, 38 (5 A): : 2921 - 2927
- [10] Effective creation of oxygen vacancies as an electron carrier source in tin-doped indium oxide films by plasma sputtering Journal of Applied Physics, 2006, 100 (11):