Ultrahigh-speed InP/InGaAs double-heterostructure bipolar transistors and analyses of their operation

被引:0
|
作者
Matsuoka, Yutaka [1 ]
Yamahata, Shoji [1 ]
Kurishima, Kenji [1 ]
Ito, Hiroshi [1 ]
机构
[1] NTT Opto-electronics Lab, Kanagawa, Japan
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:5646 / 5654
相关论文
共 50 条
  • [41] INP/INGAAS DOUBLE HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN ON SI
    MAKIMOTO, T
    KURISHIMA, K
    KOBAYASHI, T
    ISHIBASHI, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1991, 30 (12B): : 3815 - 3817
  • [42] HIGH-CURRENT-GAIN SUBMICROMETER INGAAS/INP HETEROSTRUCTURE BIPOLAR-TRANSISTORS
    NOTTENBURG, RN
    CHEN, YK
    PANISH, MB
    HAMM, R
    HUMPHREY, DA
    IEEE ELECTRON DEVICE LETTERS, 1988, 9 (10) : 524 - 526
  • [43] Comparative investigation of InP/InGaAs heterostructure-emitter tunneling and superlattice bipolar transistors
    Jung-Hui Tsai
    Ching-Sung Lee
    Chung-Cheng Chiang
    Yi-Ting Chao
    Semiconductors, 2014, 48 : 809 - 814
  • [44] Comparative investigation of InP/InGaAs heterostructure-emitter tunneling and superlattice bipolar transistors
    Tsai, Jung-Hui
    Lee, Ching-Sung
    Chiang, Chung-Cheng
    Chao, Yi-Ting
    SEMICONDUCTORS, 2014, 48 (06) : 809 - 814
  • [45] Hafnium oxide passivation of InGaAs/InP heterostructure bipolar transistors by electron beam evaporation
    Driad, R.
    Schmidt, R.
    Kirste, L.
    Loesch, R.
    Mikulla, M.
    Ambacher, O.
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 2, 2012, 9 (02):
  • [46] Hot-electron InGaAs/InP heterostructure bipolar transistors with fT of 110 GHz
    Nottenburg, Richard N.
    Chen, Y.K.
    Panish, Morton B.
    Humphrey, D.A.
    Hamm, R.
    Electron device letters, 1989, 10 (01): : 30 - 32
  • [47] GAINASP-INP DOUBLE-HETEROSTRUCTURE LASERS
    SUGIYAMA, KOK
    CZECHOSLOVAK JOURNAL OF PHYSICS, 1980, 30 (03) : 345 - &
  • [48] CHARACTERIZATION OF ULTRAHIGH-SPEED PSEUDOMORPHIC INGAAS ALGAAS INVERTED HIGH ELECTRON-MOBILITY TRANSISTORS
    FUJISHIRO, HI
    TSUJI, H
    NISHI, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (5A): : 1272 - 1279
  • [49] A 12Gb/s laser and optical modulator driver circuit with InGaAs/InP double heterostructure bipolar transistors
    Bauknecht, R
    Schneibel, HP
    Schmid, J
    Melchior, H
    1996 EIGHTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, 1996, : 61 - 63
  • [50] INP/INGAASP DOUBLE-HETEROSTRUCTURE OPTOELECTRONIC SWITCH
    KOVACIC, SJ
    ROBINSON, BJ
    SIMMONS, JG
    THOMPSON, DA
    IEEE ELECTRON DEVICE LETTERS, 1993, 14 (02) : 54 - 56