共 50 条
- [34] InP/InGaAs/InP Double Heterojunction Bipolar Transistors with 300 GHz Fmax 2001 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 2001, : 31 - 34
- [35] High-current-gain submicrometer InGaAs/InP heterostructure bipolar transistors Electron device letters, 1988, 9 (10): : 524 - 526
- [36] Characterization of ultrahigh-speed pseudomorphic InGaAs/AlGaAs inverted high electron mobility transistors Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1992, 31 (5 A): : 1272 - 1279
- [38] InGaAs/InP DOUBLE HETEROSTRUCTURE BIPOLAR TRANSISTORS WITH NEAR-IDEAL beta VERSUS IC CHARACTERISTIC. Electron device letters, 1986, EDL-7 (11): : 643 - 645
- [40] Passivation of graded-base InP/InGaAs/InP double heterostructure bipolar transistors by room-temperature deposited SiNx. 2003 INTERNATIONAL CONFERENCE INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 2003, : 156 - 159