Properties of silicon oxide films deposited by plasma-enhanced CVD using organosilicon reactants and mass analysis in plasma

被引：1
|
作者：
Inoue, Yasushi [1 ]
Takai, Osamu [1 ]
机构：
[1] Dept. of Mat. Processing Engineering, Nagoya University, Chikusaku, 464-01, Nagoya, Japan
来源：
Thin Solid Films | 1999年 / 341卷 / 01期
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页码：47 / 51
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