Axial microscopic distribution of grown-in defects in Czochralski-grown silicon crystals

被引：0
|
作者：
机构：
[1] Umeno, Shigeru
[2] Sadamitsu, Shinsuke
[3] Murakami, Hiroki
[4] Hourai, Masataka
[5] Sumita, Shigeo
[6] Shigematsu, Tatsuhiko
来源：
Umeno, Shigeru | 1600年 / 32期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [41] CRACKING OF CZOCHRALSKI-GROWN CRYSTALS
    BRICE, JC
    JOURNAL OF CRYSTAL GROWTH, 1977, 42 (DEC) : 427 - 430
  • [42] Formation of grown-in defects during Czochralski silicon crystal growth
    Nishikawa, Hideshi
    Tanaka, Tadami
    Yanase, Yoshio
    Hourai, Masataka
    Sano, Masakazu
    Tsuya, Hideki
    1997, JJAP, Tokyo, Japan (36):
  • [43] HETEROGENEOUS DISTRIBUTION OF INTERSTITIAL OXYGEN IN ANNEALED CZOCHRALSKI-GROWN SILICON-CRYSTALS
    SHIMURA, F
    OHNISHI, Y
    TSUYA, H
    APPLIED PHYSICS LETTERS, 1981, 38 (11) : 867 - 870
  • [44] A new method for transmission electron microscope observation of grown-in defects in As-grown Czochralski silicon (111) crystals
    Yanase, Y
    Ono, T
    Kitamura, T
    Horie, H
    Ochiai, T
    Okamoto, S
    Tsuya, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (10): : 6200 - 6203
  • [45] Grown-in defects in heavily phosphorus-doped Czochralski silicon
    Zeng, Yuheng
    Chen, Jiahe
    Ma, Xiangyang
    Zeng, Zhidan
    Yang, Deren
    PHYSICA B-CONDENSED MATTER, 2009, 404 (23-24) : 4619 - 4621
  • [46] Grown-in microdefects and photovoltaic characteristics of heavily Ge co-doped Czochralski-grown p-type silicon crystals
    Arivanandhan, Mukannan
    Gotoh, Raira
    Fujiwara, Kozo
    Uda, Satoshi
    Hayakawa, Yasuhiro
    Konagai, Makoto
    SCRIPTA MATERIALIA, 2013, 69 (09) : 686 - 689
  • [47] Analysis of grown-in defects in Czochralski Si
    Itsumi, M
    JOURNAL OF CRYSTAL GROWTH, 2000, 210 (1-3) : 1 - 6
  • [48] Grown-in defects in heavily boron-doped Czochralski silicon
    Yu, XG
    Ma, XY
    Li, CL
    Yang, JS
    Yang, DR
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (7A): : 4082 - 4086
  • [49] Effect of the Ingot Cooling on the Grown-in Defects in Silicon Czochralski Growth
    Sim, Bok-Cheol
    Jung, Yo-Han
    Lee, Hong-Woo
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 48 (10) : 1055031 - 1055034
  • [50] Microvoid defects in nitrogen- and/or carbon-doped Czochralski-grown silicon crystals
    Nakai, K., 1600, Japan Society of Applied Physics (42):
12345