HOT ELECTRON SPECTROSCOPY OF GaAs.

被引：0
|
作者：
Levi, A.F.J. [1 ]
Hayes, J.R. [1 ]
Platzman, P.M. [1 ]
Wiegmann, W. [1 ]
机构：
[1] AT&T Bell Lab, Murray Hill, NJ,, USA, AT&T Bell Lab, Murray Hill, NJ, USA
来源：
Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics | 1985年 / 134 B-C卷 / 1-3期
关键词：
HOT ELECTRONS;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：480 / 486
相关论文
共 50 条
  • [21] GaN High Electron Mobility Transistor Simulations With Full Wave and Hot Electron Effects
    Grupen, Matt
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2016, 63 (08) : 3096 - 3102
  • [22] Hot electron emission from insulators under electron-beam processing.
    Filachev, AM
    Fouks, BI
    Greenfield, DE
    FOURTH ALL-RUSSIAN SEMINAR ON PROBLEMS OF THEORETICAL AND APPLIED ELECTRON OPTICS, 2000, 4187 : 86 - 93
  • [23] Metamaterial Perfect Absorber Based Hot Electron Photodetection
    Li, Wei
    Valentine, Jason
    NANO LETTERS, 2014, 14 (06) : 3510 - 3514
  • [24] Enhancement of Radiative Plasmon Decay by Hot Electron Tunneling
    Wang, Xiao
    Braun, Kai
    Zhang, Dai
    Peisert, Heiko
    Adler, Hilmar
    Chasse, Thomas
    Meixner, Alfred J.
    ACS NANO, 2015, 9 (08) : 8176 - 8183
  • [25] Hot-electron drift velocity and hot-phonon decay in AlInN/AlN/GaN
    Ardaravicius, L.
    Liberis, J.
    Kiprijanovic, O.
    Matulionis, A.
    Wu, M.
    Morkoc, H.
    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2011, 5 (02): : 65 - 67
  • [26] Detection of hot electron-driven photochemical reaction of steady- state NO2 gas molecules by surface-enhanced Raman spectroscopy
    Awada, Chawki
    Shaalan, Nagih M.
    Dab, Chahinez
    Ruffino, Francesco
    APPLIED SURFACE SCIENCE, 2022, 604
  • [27] Slowing Hot-Electron Relaxation in Mix-Phase Nanowires for Hot-Carrier Photovoltaics
    Wang, Hailu
    Wang, Fang
    Xu, Tengfei
    Xia, Hui
    Xie, Runzhang
    Zhou, Xiaohao
    Ge, Xun
    Liu, Weiwei
    Zhu, Yicheng
    Sun, Liaoxin
    Guo, Jiaxiang
    Ye, Jiafu
    Zubair, Muhammad
    Luo, Man
    Yu, Chenhui
    Sun, Deyan
    Li, Tianxin
    Zhuang, Qiandong
    Fu, Lan
    Hu, Weida
    Lu, Wei
    NANO LETTERS, 2021, 21 (18) : 7761 - 7768
  • [28] Hot-Electron-Related Degradation in InAlN/GaN High-Electron-Mobility Transistors
    Tapajna, Milan
    Killat, Nicole
    Palankovski, Vassil
    Gregusova, Dagmar
    Cico, Karol
    Carlin, Jean-Francois
    Grandjean, Nicolas
    Kuball, Martin
    Kuzmik, Jan
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2014, 61 (08) : 2793 - 2801
  • [29] Hot-electron induced defect generation in AlGaN/GaN high electron mobility transistors
    Rao, Hemant
    Bosman, Gijs
    SOLID-STATE ELECTRONICS, 2013, 79 : 11 - 13
  • [30] Mechanism of hot electron electroluminescence in GaN-based transistors
    Brazzini, Tommaso
    Sun, Huarui
    Sarti, Francesco
    Pomeroy, James W.
    Hodges, Chris
    Gurioli, Massimo
    Vinattieri, Anna
    Uren, Michael J.
    Kuball, Martin
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2016, 49 (43)
12345