HOT ELECTRON SPECTROSCOPY OF GaAs.

被引:0
|
作者
Levi, A.F.J. [1 ]
Hayes, J.R. [1 ]
Platzman, P.M. [1 ]
Wiegmann, W. [1 ]
机构
[1] AT&T Bell Lab, Murray Hill, NJ,, USA, AT&T Bell Lab, Murray Hill, NJ, USA
来源
Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics | 1985年 / 134 B-C卷 / 1-3期
关键词
HOT ELECTRONS;
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:480 / 486
相关论文
共 50 条
  • [1] Hot-electron noise spectroscopy for HFET channels
    Sermuksnis, Emilis
    Liberis, Juozapas
    Simukovic, Artur
    Matulionis, Arvydas
    Ullah, Md Barkat
    Toporkov, Mykyta
    Avrutin, Vitaliy
    Ozgur, Umit
    Morkoc, Hadis
    2017 INTERNATIONAL CONFERENCE ON NOISE AND FLUCTUATIONS (ICNF), 2017,
  • [2] Hot-electron bend resistance in a ballistic GaAs/AlGaAs cross junction
    Wiemann, M.
    Cetinkaya, A.
    Wieser, U.
    Kunze, U.
    Reuter, D.
    Wieck, A. D.
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2008, 40 (06) : 2128 - 2130
  • [3] Hot electron distribution in quantum cascade and single stage GaAs/AlGaAs periodic superlattice structures
    Troccoli, M
    Scamarcio, G
    Valentini, A
    Casamassima, G
    Striccoli, M
    OPTICAL MATERIALS, 2001, 17 (1-2) : 223 - 225
  • [4] Hot-electron noise in a GaAs planar-doped barrier diode:: Experiment and Monte Carlo simulation
    Liberis, J
    Gruzinskis, V
    Matulionis, A
    Sakalas, P
    Saltis, R
    Starikov, E
    Shiktorov, P
    Szentpáli, B
    ULTRAFAST PHENOMENA IN SEMICONDUCTORS, 1999, 297-2 : 175 - 178
  • [5] THz semiconductor hot electron bolometer
    Dobrovolsky, V. N.
    Sizov, F. F.
    TERAHERTZ AND GIGAHERTZ ELECTRONICS AND PHOTONICS V, 2006, 6120
  • [6] Calculation of the temperature dependence of hot electron scattering in heavily p-doped GaAs using a high-temperature approximation to the dielectric function
    Narayan, V
    Rorison, JM
    Inkson, JC
    PHYSICA B-CONDENSED MATTER, 2002, 324 (1-4) : 393 - 402
  • [7] X-ray line polarization spectroscopy to study hot electron transport in ultra-short laser produced plasma
    Inubushi, Y
    Nishimura, H
    Ochiai, M
    Fujioka, S
    Johzaki, T
    Mima, K
    Kawamura, T
    Nakazaki, S
    Kai, T
    Sakabe, S
    Izawa, Y
    JOURNAL OF QUANTITATIVE SPECTROSCOPY & RADIATIVE TRANSFER, 2006, 99 (1-3) : 305 - 313
  • [8] HOT-ELECTRON FLUCTUATIONS AND TRANSISTOR PERFORMANCE: HOT-PHONON EFFECTS
    Matulionis, A.
    Morkoc, H.
    LITHUANIAN JOURNAL OF PHYSICS, 2014, 54 (01): : 1 - 6
  • [9] Hot electron and hot hole degradation of UHV/CVD SiGe HBT's
    Gogineni, U
    Cressler, JD
    Niu, G
    Harame, DL
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2000, 47 (07) : 1440 - 1448
  • [10] A Graphene-Based Hot Electron Transistor
    Vaziri, Sam
    Lupina, Grzegorz
    Henkel, Christoph
    Smith, Anderson D.
    Ostling, Mikael
    Dabrowski, Jarek
    Lippert, Gunther
    Mehr, Wolfgang
    Lemme, Max C.
    NANO LETTERS, 2013, 13 (04) : 1435 - 1439