Formation of LaSi2-x layers on Si by high-current La ion implantation

被引:0
|
作者
机构
[1] Tang, Xiao Jia
[2] Cheng, Xiang Qian
[3] Wang, Run Shun
[4] Liu, Bai Xin
来源
Tang, X.J. (dmslbx@tsinghua.edu.cn) | 1600年 / Japan Society of Applied Physics卷 / 42期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [1] Formation of LaSi2-x layers on Si by high-current La ion implantation
    Tang, XJ
    Cheng, XQ
    Wang, RS
    Liu, BX
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2003, 42 (5A): : 2834 - 2838
  • [2] Formation of YSi2-x layers on Si by high-current Y ion implantation
    Wang, RS
    Cheng, XQ
    Lai, WS
    Liu, BX
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2001, 34 (16) : 2465 - 2468
  • [3] Ti-Si compounds formation by high-current ion implantation
    Liu, ZQ
    Feng, JY
    Li, WZ
    JOURNAL OF CRYSTAL GROWTH, 2002, 236 (04) : 655 - 660
  • [4] Formation of n-type CrSi2 semiconductor layers on Si by high-current Cr ion implantation
    Zhu, HN
    Gao, KY
    Liu, BX
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2000, 33 (05) : L49 - L52
  • [5] Growth of DySi2 layers on Si surface by high-current Dy-ion implantation
    Cheng, XQ
    Liu, BX
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 42 (7A): : 4469 - 4472
  • [6] Growth of DySi2 layers on Si surface by high-current Dy-ion implantation
    Cheng, Xiang Qian
    Liu, Bai Xin
    1600, Japan Society of Applied Physics (42):
  • [7] Formation of high-conductivity NiSi2 layers on Si at zero-mismatch temperature by high-current Ni-ion implantation
    Gao, KY
    Liu, BX
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1999, 68 (03): : 333 - 337
  • [8] Formation of high-conductivity NiSi2 layers on Si at zero-mismatch temperature by high-current Ni-ion implantation
    K.Y. Gao
    B.X. Liu
    Applied Physics A, 1999, 68 : 333 - 337
  • [9] The luminescence of LaSi2-x formed by ion beam synthesis in (111) silicon wafer
    Cheng, GA
    Xiao, ZS
    Zhu, JH
    Xu, SL
    Ye, DR
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1998, 135 (1-4): : 550 - 554
  • [10] Structural and morphological evolution emerging in Si surface layers upon high-current Tb-ion implantation
    Cheng, XQ
    Liu, BX
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (5A): : 2859 - 2863