Optical properties of interacting Si nanoclusters in SiO2 fabricated by ion implantation and annealing

被引:0
|
作者
Shimizu-Iwayama, Tsutomu [1 ]
Hole, David E. [1 ]
Townsend, Peter D. [1 ]
机构
[1] Aichi Univ of Education, Aichi, Japan
来源
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms | 1999年 / 147卷 / 1-4期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:350 / 355
相关论文
共 50 条
  • [1] Optical properties of interacting Si nanoclusters in SiO2 fabricated by ion implantation and annealing
    Shimizu-Iwayama, T
    Hole, DE
    Townsend, PD
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1999, 147 (1-4): : 350 - 355
  • [2] Characteristic photoluminescence properties of Si nanocrystals in SiO2 fabricated by ion implantation and annealing
    Shimizu-Iwayama, T
    Hama, T
    Hole, DE
    Boyd, IW
    SOLID-STATE ELECTRONICS, 2001, 45 (08) : 1487 - 1494
  • [3] Excess Si concentration dependence of the photoluminescence of Si nanoclusters in SiO2 fabricated by ion implantation
    Shimizu-Iwayama, T
    Hole, DE
    Townsend, PD
    LIGHT EMISSION FROM SILICON: PROGRESS TOWARDS SI-BASED OPTOELECTRONICS, 1999, 77 : 235 - 239
  • [4] Excess Si concentration dependence of the photoluminescence of Si nanoclusters in SiO2 fabricated by ion implantation
    Shimizu-Iwayama, T
    Hole, DE
    Townsend, PD
    JOURNAL OF LUMINESCENCE, 1998, 80 (1-4) : 235 - 239
  • [5] Optical properties of Si nanocrystals formed in SiO2 by ion implantation
    White, CW
    Withrow, SP
    Meldrum, A
    Budai, JD
    Hembree, DM
    Zhu, JG
    Henderson, DO
    Prawer, S
    AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY-1998, 1998, 507 : 249 - 254
  • [6] Optical properties of silicon nanoclusters fabricated by ion implantation
    Shimizu-Iwayama, T
    Kurumado, N
    Hole, DE
    Townsend, PD
    JOURNAL OF APPLIED PHYSICS, 1998, 83 (11) : 6018 - 6022
  • [7] Artificial dielectrics:: Nonlinear properties of Si nanoclusters formed by ion implantation in SiO2 glassy matrix
    Vijayalakshmi, S
    Grebel, H
    Iqbal, Z
    White, CW
    JOURNAL OF APPLIED PHYSICS, 1998, 84 (12) : 6502 - 6506
  • [8] Optical and structural properties of encapsulated Si nanocrystals formed in SiO2 by ion implantation
    Iwayama, TS
    Hama, T
    Hole, DE
    Boyd, IW
    SURFACE & COATINGS TECHNOLOGY, 2002, 158 : 712 - 716
  • [9] Photoluminescence of Er-doped SiO2 layers containing Si nanoclusters using dual ion implantation and annealing
    Cheng, XQ
    Sun, JM
    Kögler, R
    Skorupa, W
    Möller, W
    Prucnal, S
    VACUUM, 2005, 78 (2-4) : 667 - 671
  • [10] Optical properties of Ag nanoclusters formed by irradiation and annealing of SiO2/SiO2:Ag thin films
    Guner, S.
    Budak, S.
    Gibson, B.
    Ila, D.
    APPLIED SURFACE SCIENCE, 2014, 310 : 180 - 183