Modeling charge accumulation in a MOS-transistor

被引：0

作者：

Gadiyak, G.V.

机构：

来源：

Avtometriya | 1995年 / 04期

关键词：

Charge carriers - Computer simulation - Differential equations - Mathematical models - Numerical methods - Semiconductor materials;

D O I：

暂无

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学科分类号：

摘要：

Results of numerical modeling of a charge radiation accumulation process in undergate dielectrics on the basis of a diffusion-drift model are presented. The model takes into account the processes of trapping and emission of carriers with inhomogeneously distributed traps. It is shown that for satisfactory description of charge accumulation processes one can use mobilities of electrons and holes of the same magnitude value as well as the experimental values for trapping cross sections and carriers recombination. Volt-ampere characteristics of a MOS-transistor are calculated with allowance for the effects of avalanche multiplication.

引用

页码：27 / 34