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- [5] MINORITY-CARRIER LIFETIME OF GAAS ON SILICONCONFERENCE RECORD OF THE TWENTIETH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1988, VOLS 1-2, 1988, : 684 - 688AHRENKIEL, RKALJASSIM, MMDUNLAVY, DJJONES, KMVERNON, SMTOBIN, SPHAVEN, VE
- [6] ON THE INJECTION LEVEL DEPENDENCE OF THE MINORITY-CARRIER LIFETIME IN DEFECTED SILICON SUBSTRATESSOLID-STATE ELECTRONICS, 1984, 27 (06) : 573 - &DEPAUW, PMERTENS, RVANOVERSTRAETEN, RJAIN, SC
- [7] DOPING DEPENDENCE OF MINORITY-CARRIER LIFETIME IN GA-DOPED SILICONCONFERENCE RECORD OF THE TWENTIETH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1988, VOLS 1-2, 1988, : 435 - 440PANG, SKROHATGI, ACISZEK, TF
- [8] MINORITY-CARRIER LIFETIME OF MAGNETIC-FIELD APPLIED CZOCHRALSKI SILICON-WAFERSAPPLIED PHYSICS LETTERS, 1988, 53 (19) : 1850 - 1852HIGUCHI, TGAYLORD, EROZGONYI, GASHIMURA, F
- [10] The effect of ultraviolet irradiation on the minority carrier recombination lifetime of oxidized silicon wafersJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1997, 144 (05) : L103 - L105Lee, WPKhong, YLMuhamad, MRTou, TY