Intersubband absorption in strain-compensated InAlAs/AlAs/InxGa(1-x)As (x ∼ 0.8) quantum wells grown on InP

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机构：
[1] Lai, K.T.
[2] Missous, M.
[3] Gupta, R.
[4] Haywood, S.K.
来源：
Lai, K.T. (k.t.lai@hull.ac.uk) | 1600年 / American Institute of Physics Inc.卷 / 93期
关键词：
Absorption - Band structure - Photodetectors - Semiconducting indium compounds;
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摘要：
The intersubband absorption in strain-compensated quantum wells grown on InP was studied. The room temperature absorption spectra showed several peaks which originated from intersubband transitions in the conduction band of the InGaAs well. It was found that the transition energies were in agreement with the theoretical model.
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