Piezoresistive Pressure Sensors.

被引：0

作者：

Almasi, Istvan ^{[1
]}

Barsony, Istvan ^{[1
]}

Berkecz, Janos ^{[1
]}

机构：

[1] Mikroelektronikai Wallalat, Budapest, Hung, Mikroelektronikai Wallalat, Budapest, Hung

来源：

| 1984年 / 32期

关键词：

SILICON AND ALLOYS - Applications;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The authors discuss development aspects of one of the most important types of the microelectronic sensors, the silicon pressure sensors working on the principle of piezo-resistivity. The basic requirements to pressure sensors are the high pressure-sensitivity, the low nonlinearity and the low temperature dependence. Taking these into account, the technological-theoretical background of the pressure measuring family of the Microelectronics Enterprise is described, within the range of 0. 4 - 600 bar.

引用