Optical constants of a-SixC1-x:H alloy films deposited by tetrode RF sputtering

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作者：

机构：

[1] Akimoto, Makio

[2] Akaida, Yosinori

[3] Gekka, Yasuo

来源：

Akimoto, Makio | 1600年 / 29期

关键词：

Semiconducting Films - Sputtering;

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摘要：

The optical constants of hydrogenated amorphous silicon-carbon alloy films have been determined using the pseudo-Brewster angle method. The a-SiC:H films were deposited by a tetrode RF sputtering technique applying the plasma decomposition of C3H8 and H2/Ar mixed gas. The partial pressure ratio of C3H8 to H2/Ar mixed gas, Rp, in the film deposition chamber was chosen as a variable factor for the film deposition. The dependences of the optical energy gap and refractive of deposited films on Rp were investigated. It was concluded that the absorption edge of a-SixC1-x:H films is related to the carbon content (1-x) in the films, which is controlled by Rp.

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