Growth by liquid-phase epitaxy and characterization of Alo.28Ga0.72As0.62P0.38

被引：0

作者：

Chen, Chyuan-Wei ^{[1
]}

Wu, Meng-Chyi ^{[1
]}

Kuo, Li-Kuang ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Taiwan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1992年 / 31卷 / 08期

关键词：

Electronic properties - Epitaxial growth - Heterojunctions - Photoluminescence - Semiconducting gallium compounds;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Al0.28Ga0.72As0.62P0.38 epitaxial layers were grown on GaAs0.61P0.39 substrates by liquid-phase epitaxy using a supercooling technique. The growth conditions and properties of the undoped AlGaAsP layers are described in detail. A fairly shiny surface and a flat AlGaAsP-GaAsP heterointerface was obtained in our study. The lattice mismatch normal to the wafer surface between the Al0.28Ga0.72As0.62P0.38 layer and GaAs0.61P0.39 substrate is approx. + 0.27%. Low-electron-concentration undoped epitaxial layers can be grown from a Ga solution baked at a temperature of 900°C for 10h or more and with a approx. 6°C supersaturation temperature. We obtained the lowest electron concentrations of 1 × 1016 cm-3 measured by the capacitance-voltage method. By the photoluminescence measurements at various temperatures and excitation levels, the four recombination peaks observed are associated with the near-band-to-band, donor-to-valence-band, conduction-band-to-acceptor and donor-to-acceptor-pair transitions. The band gap of the Al0.28Ga0.72As0.62P0.38 is approx. 2.016 eV (6150 angstrom). The binding energy of the donor and acceptor is 14 and 36 meV, respectively.

引用

页码：2514 / 2518