InP-based and metamorphic devices for multifunctional MMICs in mm-wave communication systems

被引：0

作者：

Ziegler, V. ^{[1
]}

Gaessler, C. ^{[1
]}

Woelk, C. ^{[1
]}

Berlec, F.-J. ^{[1
]}

Deufel, R. ^{[1
]}

Berg, M. ^{[1
]}

Dickmann, J. ^{[1
]}

Schumacher, H. ^{[1
]}

Alekseev, E. ^{[1
]}

Pavlidis, D. ^{[1
]}

机构：

[1] Research Cent Ulm, Ulm, Germany

来源：

| 2000年

关键词：

Field effect transistors - Heterojunctions - Millimeter wave devices - Phase shifters - Photodiodes - Semiconducting indium phosphide - Semiconductor switches - Spurious signal noise;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

In this paper, the performances of our InP-based and metamorphic HFETs are compared. Measurements on the RF as well as the noise behaviour are presented. Furthermore, first results are demonstrated on the integration of the InP-based PIN diode and HFET on one InP-substrate. Using these two devices, we integrated three different MMIC designs on one wafer: SPDT switch, phaseshifter and a combination of SPDT switch and LNA for a multifunctional MMIC.

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