ANISOTROPY OF THE HALL EFFECT OF MAGNETORESISTANCE OF UNIAXIALLY DEFORMED p-TYPE Ge.

被引：0

作者：

Baranskii, P.I.

Baidakov, V.V.

Elizarov, A.I.

机构：

来源：

Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov) | 1975年 / 8卷 / 12期

关键词：

Compendex;

D O I：

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学科分类号：

摘要：

SEMICONDUCTING GERMANIUM

引用

页码：1554 / 1556

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