ANISOTROPY OF THE HALL EFFECT OF MAGNETORESISTANCE OF UNIAXIALLY DEFORMED p-TYPE Ge.

被引：0
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作者：
Baranskii, P.I.
Baidakov, V.V.
Elizarov, A.I.
机构：
来源：
Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov) | 1975年 / 8卷 / 12期
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摘要：
SEMICONDUCTING GERMANIUM
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页码：1554 / 1556
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