NEW METHOD BASED ON THE SUPERPOSITION PRINCIPLE FOR THE CALCULATION OF THE TWO-DIMENSIONAL POTENTIAL IN A BURIED-CHANNEL CHARGE-COUPLED DEVICE.

被引：0

作者：

Lester, T.P. ^{[1
]}

Pulfrey, D.P. ^{[1
]}

机构：

[1] Univ of British Columbia, Dep of, Electrical Engineering, Vancouver,, BC, Can, Univ of British Columbia, Dep of Electrical Engineering, Vancouver, BC, Can

来源：

IEEE Transactions on Electron Devices | 1984年 / ED-31卷 / 07期

关键词：

BURIED-CHANNEL CHARGE-COUPLED DEVICE - SUPERPOSITION PRINCIPLE - TWO-DIMENSIONAL POTENTIAL;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：999 / 1001

共 24 条

[1] A NEW METHOD BASED ON THE SUPERPOSITION PRINCIPLE FOR THE CALCULATION OF THE TWO-DIMENSIONAL POTENTIAL IN A BURIED-CHANNEL CHARGE-COUPLED DEVICE
LESTER, TP
PULFREY, DL
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (07) : 999 - 1001
[2] A NEW METHOD FOR THE TWO-DIMENSIONAL CALCULATION OF THE POTENTIAL DISTRIBUTION IN A BURIED-CHANNEL CHARGE-COUPLED DEVICE - THEORY AND EXPERIMENTAL-VERIFICATION
DEMEYER, KM
DECLERCK, GJ
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (03) : 313 - 321
[3] TWO-DIMENSIONAL TRANSIENT ANALYSIS OF A BURIED-CHANNEL CHARGE-COUPLED DEVICE
HSIEH, HC
LUK, TW
SOLID-STATE ELECTRONICS, 1984, 27 (03) : 213 - 224
[4] DESIGNING OF A BURIED-CHANNEL CHARGE-COUPLED DEVICE
TANIKAWA, K
SHIMOHASHI, A
ARAKAWA, I
OHTSUKI, O
JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (05) : 909 - 910
[5] OPERATIONAL MODE IN A BURIED-CHANNEL CHARGE-COUPLED DEVICE
TANIKAWA, K
SHIMOHASHI, A
TOKUHIRA, S
OHTSUKI, O
JAPANESE JOURNAL OF APPLIED PHYSICS, 1975, 14 (10) : 1629 - 1630
[6] APPROXIMATE 2-DIMENSIONAL TRANSIENT ANALYSIS OF CHARGE TRANSPORT IN A BURIED-CHANNEL CHARGE-COUPLED DEVICE
FERGUSON, RS
RYAN, WD
REVUE DE PHYSIQUE APPLIQUEE, 1978, 13 (12): : 683 - 690
[7] DESIGN CONSIDERATIONS FOR A 2-PHASE, BURIED-CHANNEL, CHARGE-COUPLED DEVICE
MCKENNA, J
SCHRYER, NL
WALDEN, RH
BELL SYSTEM TECHNICAL JOURNAL, 1974, 53 (08): : 1581 - 1597
[8] A BURIED-CHANNEL CHARGE-COUPLED DEVICE WITH NONOVERLAPPING GATE STRUCTURE FOR A CMOS BCCD PROCESS
WARMERDAM, L
WALLINGA, H
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (05) : 658 - 663
[9] CHARGE-TRANSFER EFFICIENCY IN A BURIED-CHANNEL CHARGE-COUPLED DEVICE AT VERY LOW SIGNAL LEVELS
JACK, MD
DYCK, RH
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (02) : 228 - 234
[10] CHARGE-TRANSFER EFFICIENCY IN A BURIED-CHANNEL CHARGE-COUPLED DEVICE AT VERY LOW SIGNAL LEVELS
JACK, MD
DYCK, RH
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1976, 11 (01) : 160 - 166

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