High field hole velocity and velocity overshoot in silicon inversion layers

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Univ of California, Berkeley, United States [1 ]
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IEEE Electron Device Lett | / 2卷 / 54-56期
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Drain to source voltage - Gate current - Gate to source voltage - Threshold voltage;
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摘要：
We report measurements of the drift velocity of holes in silicon inversion layers. The saturation velocity of holes at 300 K is found to be strongly dependent on the effective vertical field. No hole velocity overshoot was observed down to 0.16-μm channel length at room temperature. At 77 K, hole velocity saturation is much less pronounced, and a 10% higher average velocity is observed for 0.16- μm channel length as compared to 0.36-μm channel length.
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