BEHAVIOR OF IMPLANTED ARSENIC DURING RAPID THERMAL ANNEALING OF Ti AND Si.

被引：0
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作者：
Ponpon, J.P. [1 ]
Saulnier, A. [1 ]
Stuck, R. [1 ]
机构：
[1] Cent de Recherches Nucleaires, Strasbourg, Fr, Cent de Recherches Nucleaires, Strasbourg, Fr
来源：
Applied physics. A, Solids and surfaces | 1987年 / A 44卷 / 03期
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摘要：
16
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页码：227 / 232
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