Fabrication of InGaAs strained quantum wire structures using selective-area metal-organic chemical vapor deposition growth

被引:0
作者
Arakawa, Taro [1 ]
Tsukamoto, Shiro [1 ]
Nagamune, Yasushi [1 ]
Nishioka, Masao [1 ]
Lee, Jin-Hee [1 ]
Arakawa, Yasuhiko [1 ]
机构
[1] Univ of Tokyo, Tokyo, Japan
来源
Japanese Journal of Applied Physics, Part 2: Letters | 1993年 / 32卷 / 10 A期
关键词
Chemical vapor deposition - Optical variables measurement - Photoluminescence - Semiconducting gallium arsenide - Semiconductor device manufacture - Semiconductor device structures - Semiconductor growth;
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摘要
We fabricated InxGa1-xAs strained quantum wire structures with various In compositions using a selective-area metal-organic chemical vapor deposition growth technique. Photoluminescence (PL) measurements at 14 K demonstrated that strained quantum wires of high quality were obtained when x is less than 0.35. Change of the full width at half-maximum of the PL peaks indicates that the structural dimensions of the quantum wires exceeded the critical thickness at around x = 0.4.
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