Texture structure analysis and crystalline quality improvement of CeO2(110) layers grown on Si(100) substrates

被引:0
|
作者
Inoue, Tomoyasu [1 ]
Ohsuna, Tetsu [1 ]
Yamada, Yoshinori [1 ]
Wakamatsu, Kiyoshi [1 ]
Itoh, Youichi [1 ]
Nozawa, Takayuki [1 ]
Sasaki, Eiji [1 ]
Yamamoto, Yasuhiro [1 ]
Sakurai, Yoshinobu [1 ]
机构
[1] Iwaki Meisel Univ, Iwaki, Japan
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:1736 / 1739
相关论文
共 50 条
  • [31] ON THE TEXTURE OF ELECTROLESS COPPER-FILMS ON EPITAXIAL CU SEED LAYERS GROWN ON SI(100) AND SI(111) SUBSTRATES
    LI, J
    SHACHAMDIAMAND, Y
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1992, 139 (04) : L37 - L39
  • [32] Facet morphology analysis of epitaxial CeO2 layers on Si substrates - Dependent on substrate orientation and layer thickness
    Inoue, T
    Yamamoto, Y
    Satoh, M
    REPORT OF RESEARCH CENTER OF ION BEAM TECHNOLOGY HOSEI UNIVERSITY, SUPPLEMENT NO 14, MARCH 1996, 1996, : 135 - 140
  • [33] Electrical properties of CeO2 thin films grown on p-Si(100) substrates by the pulsed laser deposition method
    Park, Sungmin
    Pak, Jaemoon
    Nam, Kuangwoo
    Park, Gwangseo
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2006, 49 : S460 - S464
  • [34] High energy ion assisted crystallinity improvement of epitaxially grown CeO2(110) films
    Satoh, M
    Yamamoto, Y
    Inoue, T
    REPORT OF RESEARCH CENTER OF ION BEAM TECHNOLOGY, HOSEI UNIVERSITY, SUPPLEMENT NO 15, MARCH 1997, 1997, : 137 - 142
  • [35] Low-temperature epitaxial growth of CeO2(110)/Si(100) structure by evaporation under substrate bias
    Inoue, Tomoyasu
    Yamamoto, Yasuhiro
    Satoh, Masataka
    1996, JJAP, Minato-ku (35):
  • [36] Low-temperature epitaxial growth of CeO2(110)/Si(100) structure by evaporation under substrate bias
    Inoue, T
    Yamamoto, Y
    Satoh, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1996, 35 (12B): : L1685 - L1688
  • [37] Intermediate amorphous layer formation mechanism at the interface of epitaxial CeO2 layers and Si substrates
    Inoue, Tomoyasu
    Ohsuna, Tetsu
    Obara, Yasuhiro
    Yamamoto, Yasuhiro
    Satoh, Masataka
    Sakurai, Yoshinobu
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1993, 32 (04): : 1765 - 1767
  • [38] INTERMEDIATE AMORPHOUS LAYER FORMATION MECHANISM AT THE INTERFACE OF EPITAXIAL CEO2 LAYERS AND SI SUBSTRATES
    INOUE, T
    OHSUNA, T
    OBARA, Y
    YAMAMOTO, Y
    SATOH, M
    SAKURAI, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (04): : 1765 - 1767
  • [39] Effect of annealing treatments on CeO2 grown on TiN and Si substrates by atomic layer deposition
    Vangelista, Silvia
    Piagge, Rossella
    Ek, Satu
    Lamperti, Alessio
    BEILSTEIN JOURNAL OF NANOTECHNOLOGY, 2018, 9 : 890 - 899
  • [40] CRYSTALLINE QUALITY AND SURFACE-MORPHOLOGY OF (100)CEO2 THIN-FILMS GROWN ON SAPPHIRE SUBSTRATES BY SOLID SOURCE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
    LU, Z
    HISKES, R
    DICAROLIS, SA
    NEL, A
    ROUTE, RK
    FEIGELSON, RS
    JOURNAL OF CRYSTAL GROWTH, 1995, 156 (03) : 227 - 234