Texture structure analysis and crystalline quality improvement of CeO2(110) layers grown on Si(100) substrates

被引:0
|
作者
Inoue, Tomoyasu [1 ]
Ohsuna, Tetsu [1 ]
Yamada, Yoshinori [1 ]
Wakamatsu, Kiyoshi [1 ]
Itoh, Youichi [1 ]
Nozawa, Takayuki [1 ]
Sasaki, Eiji [1 ]
Yamamoto, Yasuhiro [1 ]
Sakurai, Yoshinobu [1 ]
机构
[1] Iwaki Meisel Univ, Iwaki, Japan
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:1736 / 1739
相关论文
共 50 条
  • [1] TEXTURE STRUCTURE-ANALYSIS AND CRYSTALLINE QUALITY IMPROVEMENT OF CEO2(110) LAYERS GROWN ON SI(100) SUBSTRATES
    INOUE, T
    OHSUNA, T
    YAMADA, Y
    WAKAMATSU, K
    ITOH, Y
    NOZAWA, T
    SASAKI, E
    YAMAMOTO, Y
    SAKURAI, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1992, 31 (12B): : L1736 - L1739
  • [2] Orientation selective epitaxial growth of CeO2(100) and CeO2(110) layers on Si(100) substrates
    Inoue, T
    Sakamoto, N
    Ohashi, M
    Shida, S
    Horikawa, A
    Sampei, Y
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2004, 22 (01): : 46 - 48
  • [3] Surface morphology analysis in correlation with crystallinity of CeO2(110) layers on Si(100) substrates
    Inoue, T
    Nakamura, T
    Nihei, S
    Kamata, S
    Sakamoto, N
    Yamamoto, Y
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 2000, 18 (04): : 1613 - 1618
  • [4] Origin of crystalline quality deterioration in epitaxial growth of CeO2 layers on Si substrates
    Inoue, T
    Sakamoto, N
    Horikawa, A
    Takakura, H
    Takahashi, K
    Ohashi, M
    Shida, S
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2003, 21 (04): : 1371 - 1375
  • [5] Effect of electron incidence in epitaxial growth of CeO2(110) layers on Si(100) substrates
    Inoue, T
    Yamamoto, Y
    Satoh, M
    EPITAXIAL OXIDE THIN FILMS III, 1997, 474 : 321 - 326
  • [6] GROWTH OF (110)-ORIENTED CEO2 LAYERS ON (100) SILICON SUBSTRATES
    INOUE, T
    OHSUNA, T
    LUO, L
    WU, XD
    MAGGIORE, CJ
    YAMAMOTO, Y
    SAKURAI, Y
    CHANG, JH
    APPLIED PHYSICS LETTERS, 1991, 59 (27) : 3604 - 3606
  • [7] STRIPE-SHAPED FACETED MORPHOLOGY AND DOMAIN-STRUCTURE OF EPITAXIAL CEO2(110) LAYERS ON SI(100) SUBSTRATES
    INOUE, T
    OHSUNA, T
    OBARA, Y
    YAMAMOTO, Y
    SATOH, M
    SAKURAI, Y
    JOURNAL OF CRYSTAL GROWTH, 1993, 131 (3-4) : 347 - 351
  • [8] Studies on inclined nuclei as a cause of crystallinity deterioration in epitaxial CeO2(110) layers on Si(100) substrates
    Inoue, T
    Shida, S
    Sakamoto, N
    Horikawa, A
    Ohashi, M
    JOURNAL OF CRYSTAL GROWTH, 2003, 253 (1-4) : 366 - 373
  • [9] Surface structure of single-crystal CeO2 layers grown on Si
    Inoue, T
    Yamamoto, Y
    Satoh, M
    Ide, A
    Katsumata, S
    THIN SOLID FILMS, 1996, 281 : 24 - 27
  • [10] (110)Nd:KGW waveguide films grown on CeO2/Si substrates by pulsed laser deposition
    Atanasov, PA
    Omato, T
    Tomov, RI
    Obara, M
    THIN SOLID FILMS, 2004, 453 : 150 - 153