UHV/CVD Si epitaxial growth on double layer porous silicon

被引：0

作者：

Wang, Jin ^{[1
]}

Huang, Jingyun ^{[1
]}

Huang, Yiping ^{[1
]}

Li, Aizhen ^{[1
]}

Bao, Zongming ^{[1
]}

Zhu, Shiyang ^{[1
]}

Ye, Zhizhen ^{[1
]}

机构：

[1] Fudan, Univ, Shanghai, China

来源：

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 2000年 / 21卷 / 10期

关键词：

Chemical vapor deposition;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The UHV/CVD Si epitaxial growth on porous silicon was reported. The double-layer porous silicon with different porosity was also studied, which is formed by a two-step anodization and low-temperature, long-time treatment of porous silicon in a vacuum system. The properties of Si epitaxial layer were investigated by using XRD, XTEM and spreading resistance techniques. The results show that Si epitaxial growth layer has good crystallinity and the same orientation with Si substrate and porous silicon layer. The epitaxial Si is P-type and more than 100 Ω&middotcm.

引用

页码：979 / 983

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